In-situ chemical-mechanical polishing slurry formulation for com

Details In-situ chemical-mechanical polishing slurry formulation for com In-situ chemical-mechanical polishing slurry formulation for com

1998-07-08

2000-05-23

Gulakowski, Randy

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

216 53, 216 91, 216 93, 438692, 438693, B44C 122

Patent

active

060662662

ABSTRACT:
A process for compensating for degradation of a first polishing pad during polishing on the first polishing pad of a plurality of substrate surfaces that have substantially similar film stacks is described. The process includes: (a) characterizing a test polishing pad, which characterization includes determining changes in film removal rates of layers of the film stack during polishing of the plurality of the substrate surfaces on the test polishing pad; (b) polishing a first substrate surface on the first polishing pad, which is substantially similar to the test polishing pad, under a first set of polishing conditions; and (c) polishing a second substrate surface on the first polishing pad under a second set of polishing conditions. A difference between the second set of polishing conditions and the first set of polishing conditions is designed to minimize the changes in the film removal rates of the layers of the film stack and thereby compensate for degradation of the first polishing pad.

REFERENCES:
patent: 4793895 (1988-12-01), Kaanta et al.
patent: 5036015 (1991-07-01), Sandhu et al.
patent: 5081421 (1992-01-01), Miller et al.
patent: 5151584 (1992-09-01), Ebbing et al.
patent: 5169491 (1992-12-01), Doan
patent: 5196353 (1993-03-01), Sandhu et al.
patent: 5222329 (1993-06-01), Yu
patent: 5240552 (1993-08-01), Yu et al.
patent: 5245790 (1993-09-01), Jerbic
patent: 5245794 (1993-09-01), Salugsugan
patent: 5265378 (1993-11-01), Rostoker
patent: 5272115 (1993-12-01), Sato
patent: 5308438 (1994-05-01), Cote et al.
patent: 5310455 (1994-05-01), Pasch et al.
patent: 5321304 (1994-06-01), Rostoker
patent: 5337015 (1994-08-01), Lustig et al.
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5399234 (1995-03-01), Yu et al.
patent: 5403228 (1995-04-01), Pasch
patent: 5405806 (1995-04-01), Pfeister et al.
patent: 5439551 (1995-08-01), Meikle et al.
patent: 5483568 (1996-01-01), Yano et al.
patent: 5492594 (1996-02-01), Burke et al.
patent: 5516400 (1996-05-01), Pasch et al.
patent: 5531861 (1996-07-01), Yu et al.
patent: 5559428 (1996-09-01), Li et al.
patent: 5561541 (1996-10-01), Sharp et al.
patent: 5595526 (1997-01-01), Yau et al.
patent: 5597442 (1997-01-01), Chen et al.
patent: 5609511 (1997-03-01), Moriyama et al.
patent: 5624304 (1997-04-01), Pasch et al.
patent: 5626715 (1997-05-01), Rostoker
patent: 5637185 (1997-06-01), Murarka et al.
patent: 5639388 (1997-06-01), Kimura et al.
patent: 5643046 (1997-07-01), Katakabe et al.
patent: 5643050 (1997-07-01), Chen
patent: 5644221 (1997-07-01), Li et al.
patent: 5647952 (1997-07-01), Chen
patent: 5658183 (1997-08-01), Sandhu et al.
patent: 5660672 (1997-08-01), Li et al.
patent: 5663797 (1997-09-01), Sandhu
patent: 5664987 (1997-09-01), Renteln
patent: 5667424 (1997-09-01), Pan
patent: 5667433 (1997-09-01), Mallon
patent: 5667629 (1997-09-01), Pan et al.
patent: 5668063 (1997-09-01), Fry et al.
patent: 5670410 (1997-09-01), Pan
patent: 5672091 (1997-09-01), Takahashi et al.
patent: 5674784 (1997-10-01), Jang et al.
patent: 5695660 (1997-12-01), Litvak
patent: 5700180 (1997-12-01), Sandhu et al.
patent: 5705435 (1998-01-01), Chen
patent: 5710076 (1998-01-01), Dai et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5722875 (1998-03-01), Iwashita et al.
patent: 5741171 (1998-04-01), Sarfaty et al.
patent: 5777739 (1998-07-01), Sandhu et al.
patent: 5861055 (1999-01-01), Allman et al.
patent: 5865666 (1999-02-01), Nagahara
patent: 5868608 (1999-02-01), Allman et al.
patent: 5872633 (1999-02-01), Holzapfel et al.
patent: 5882251 (1999-03-01), Berman et al.
patent: 5888120 (1999-03-01), Doran
patent: 5893756 (1999-04-01), Berman et al.
patent: 5893796 (1999-04-01), Birang et al.
patent: 5931719 (1999-08-01), Nagahara et al.
patent: 5948697 (1999-09-01), Hata
patent: 5957757 (1999-09-01), Berman

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