In-situ chemical-mechanical planarization pad metrology...

Details In-situ chemical-mechanical planarization pad metrology... In-situ chemical-mechanical planarization pad metrology...

2007-06-26

2007-06-26

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000

Reexamination Certificate

active

10231801

ABSTRACT:
Chemical-mechanical planarization (CMP) apparatus and methods for detecting polishing pad properties using ultrasonic imaging is presented. An ultrasonic probe assembly transmits ultrasonic signals onto the surface of a polishing pad during a CMP process. Reflected ultrasonic signals are collected and analyzed to monitor polishing pad properties in real-time. This allows CMP process adjustments to be made during the CMP process.

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