In-situ barc and nitride etch process

Details In-situ barc and nitride etch process In-situ barc and nitride etch process

1997-12-10

1999-10-26

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, 438724, 438725, 438744, H01L 21306, H01L 213065, B44C 122

Patent

active

059727969

ABSTRACT:
A method for etching a semiconductor device (10) having BARC layer (22) and nitride layer (20) includes etching BARC layer (22) until reaching a first set point in the fabrication reaction chamber and then etching nitride layer (20) in-situ the fabrication reaction chamber immediately following etching BARC layer (22).

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