In-situ absolute measurement process and apparatus for film...

Optics: measuring and testing – Dimension – Thickness

Reexamination Certificate

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C156S345100, C438S001000

Reexamination Certificate

active

07821655

ABSTRACT:
An apparatus and process for in-situ measurement of thin film thickness, ash rate, and end point generally include generating and measuring shallow angle interference patterns. The apparatus generally includes a chamber having a first viewing port and a second viewing port. The first viewing port includes receiving optics configured to receive light at a shallow angle from a surface of a substrate processed therein. The second port includes a broadband illumination source and is preferably disposed in a sidewall opposite the receiving optics. The process includes calculating the thin film thickness, ash rate, and end point from the interference patterns.

REFERENCES:
patent: 4201579 (1980-05-01), Robinson et al.
patent: 4341592 (1982-07-01), Shortes et al.
patent: 4394237 (1983-07-01), Donnelly et al.
patent: 4453828 (1984-06-01), Hershel et al.
patent: 4491499 (1985-01-01), Jerde et al.
patent: 4675072 (1987-06-01), Bennett et al.
patent: 4695700 (1987-09-01), Provence et al.
patent: 4836902 (1989-06-01), Kalnitsky et al.
patent: 4977330 (1990-12-01), Batchelder et al.
patent: 4999014 (1991-03-01), Gold et al.
patent: 5045704 (1991-09-01), Coates
patent: 5343412 (1994-08-01), Birang
patent: 5362356 (1994-11-01), Schoenborn
patent: 5450205 (1995-09-01), Sawine et al.
patent: 5498308 (1996-03-01), Kamarehi et al.
patent: 5607602 (1997-03-01), Su et al.
patent: 5694207 (1997-12-01), Hung et al.
patent: 5728253 (1998-03-01), Saito et al.
patent: 5739051 (1998-04-01), Saito
patent: 5770523 (1998-06-01), Hung et al.
patent: 5773201 (1998-06-01), Fujimura et al.
patent: 5824604 (1998-10-01), Bar-Gadda
patent: 5846373 (1998-12-01), Pirkle et al.
patent: 5877032 (1999-03-01), Guinn et al.
patent: 5877407 (1999-03-01), Cadet et al.
patent: 5882489 (1999-03-01), Bersin et al.
patent: 5908319 (1999-06-01), Xu et al.
patent: 5940175 (1999-08-01), Sun
patent: 6054333 (2000-04-01), Bensaoula
patent: 6074568 (2000-06-01), Adachi et al.
patent: 6113733 (2000-09-01), Eriguchi et al.
patent: 6204922 (2001-03-01), Chalmers
patent: 6448094 (2002-09-01), Yamazawa et al.
patent: 6547458 (2003-04-01), Janos et al.
patent: 6585908 (2003-07-01), Cardoso et al.
patent: 6863772 (2005-03-01), Cheng et al.
patent: 2004/0208638 (2004-10-01), Jansen
patent: 2001-284241 (2004-04-01), None
patent: WO 97/37055 (1997-10-01), None
patent: WO 99/26277 (1999-05-01), None
John T. Davies, Thomas Metz, “Real-Time In-Situ Measurement of Film Thickness and Uniformity During Plasma Ashing of Photoresist”, SPIE, vol. 1392 Advanced Techniques for Integrated Circuit Processing (1990), pp. 551-554.
David Angell and Gottlieb S. Oehrlein, “Grazing Angle Optical Emission Interferometry for End-Point Detection”, Appl. Phys. Lett. 58 (3), Jan. 21, 1991, pp. 240-242.
D.L. Flamm, “Dry Plasma Resist Stripping Part I; Overview of Equipment,” Solid State Technologies, vol. 35, No. 8, pp. 37-39, Aug. 1992.
D.L. Flamm, “Dry Plasma Resist Stripping Part II; Physical Processes,” Solid State Technologies, vol. 35, No. 9, pp. 43-48, Sep. 1992.
S. Dzioba, G. Este, and H. M. Naguib, “Decapsulation and Photresist Stripping in Oxygen Microwave Plasmas,” J. Electrochem. Soc.: Solid State Science and Technology, vol. 129, No. 11, pp. 2537-2541, Nov. 1982.
J. Shi, M. Kamrehi, D. Shaner, S. Rounds, S. Fink, and D. Ferris, “Damage Reduction in Dry Resist Stripping Systems,” Solid State Technology, vol. 38, No. 10, pp. 75-82, Oct. 1995.
J. J. Hannon and J. M. Cook, “Oxidative Removal of Photoresist by Oxygen/Freon 116 Discharge Products,” J. Electrochem. Soc.: Solid State Science and Technology, vol. 131, No. 5, pp. 1164-1169, May 1984.
J. E. Spencer, R. A. Borel, and A. Hoff, “High Rate Photoresist Stripping in an Oxygen After Glow,” J. Electrochem. Soc.: Solid State Science and Technology, vol. 133, No. 9, pp. 1922-1925, Sep. 1986.
W. K. Chung, “Reduction of Gate Oxide Degradation in Photoresist Stripping with an RF Downstream Oxygen Plasma,” International Conference on Materials and Process Characterization for VLSI (ICMPC'88), Shanghai, China, pp. 414-417, Oct. 24-29, 1988.
Wang and B. Gelernt, “Chemiluminescence During Photoresist Stripping Process”, Solid State Technology, vol. 24, No. 11, pp. 121-123, Nov. 1981.

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