In-sit chamber cleaning method

Details In-sit chamber cleaning method In-sit chamber cleaning method

1997-09-12

1999-12-21

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 12, 134 21, 134 30, 216 58, 216 63, 216 64, 216 67, B08B 500

Patent

active

060035269

ABSTRACT:
A method for cleaning a plasma etch chamber is described which can be carried out by first terminating an etch process by stopping a process gas flow into the chamber, then maintaining a RF power in the etch chamber, and flowing a cleaning gas consists of at least one inert gas and oxygen through the chamber at a flow rate higher than the flow rate for the process gas for a length of time sufficient to evacuate substantially all the contaminating byproducts formed by the process gas. A suitable cleaning gas contains at least one inert gas of Ar, He, or N.sub.2 mixed with O.sub.2. A sufficient length of time for the cleaning process is at least 5 seconds, and preferably at least 10 seconds.

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patent: 5812403 (1998-09-01), Fong et al.
patent: 5843239 (1998-12-01), Shrotriya

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