Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-01-30
2007-01-30
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S673000, C257S666000, C257S684000, C257SE23039
Reexamination Certificate
active
11153952
ABSTRACT:
Methods of forming a semiconductor assembly are described which include a leadframe with leads having offset portions exposed at an outer surface of a material package to form a grid array. An electrically conductive compound, such as solder, may be disposed or formed on the exposed lead portions to form a grid array such as a ball grid array (“BGA”) or other similar array-type structure of dielectric conductive elements. The leads may have inner bond ends including a contact pad thermocompressively bonded to a bond pad of the semiconductor chip to enable electrical communication therewith and a lead section with increased flexibility to improve the thermocompressive bond. The inner bond ends may also be wirebonded to the bond pads.
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Koon Eng Meow
Leng Ser Bok
Poo Chia Yong
Waf Low Siu
Yu Chan Min
Micro)n Technology, Inc.
Thai Luan
TraskBritt PC
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