In-plane switching mode active matrix type liquid crystal...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S072000, C257S222000, C257S225000, C349S141000, C349S143000

Reexamination Certificate

active

06933528

ABSTRACT:
An in-plane switching mode active matrix type liquid crystal display device includes a first substrate, a second substrate located opposing the first substrate, and a liquid crystal layer sandwiched between the first and second substrates. The first substrate includes a thin film transistor, a pixel electrode, a common electrode, a data line, a scanning line, and a common electrode line. The scanning line and the common electrode line are formed in a common layer in parallel with each other. The common electrode overlaps the data line and the scanning line with an interlayer insulating film existing therebetween. The common electrode line is singly formed at either side about the scanning line. The common electrode is electrically connected to the common electrode line through a contact hole formed throughout the interlayer insulating film, and shields a gap formed between the scanning line and the common electrode line.

REFERENCES:
patent: 5648654 (1997-07-01), Possin
patent: 6704085 (2004-03-01), Nishimura et al.
patent: 2973934 (1999-09-01), None
patent: 2000-81637 (2000-03-01), None
patent: 2000-89240 (2000-03-01), None
patent: 1999-009891 (1999-02-01), None
patent: 2002-0017436 (2002-03-01), None

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