Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-09-27
2005-09-27
Chaudhuri, Olik (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
Reexamination Certificate
active
06949831
ABSTRACT:
An interconnect structure for microelectronic devices indudes a plurality of patterned, spaced apart, substantially co-planar, conductive lines, a first portion of the plurality of conductive lines having a first Intralayer dielectric of a first dielectric constant therebetween, and a second portion of the plurality of conductive lines having a second intralayer dielectric of a second dielectric constant therebetween. By providing in-plane selectability of dielectric constant, in-plane decoupling capacitance, as between power supply nodes, can be increased, while in-plane parasitic capacitance between signal lines can be reduced.
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Chiang Chien
Fraser David B.
Blakely , Sokoloff, Taylor & Zafman LLP
Chaudhuri Olik
Malsawma Lex H.
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