In-phase RF drive of Mach-Zehnder modulator push-pull...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S014000, C257S021000, C385S002000, C385S003000

Reexamination Certificate

active

06933583

ABSTRACT:
A coupled quantum well Mach-Zehnder modulator that employs a push-pull structure to reduce the modulation voltage. The Mach-Zehnder modulator includes a first arm having a first PIN semiconductor device and a second arm having a second PIN semiconductor device. The intrinsic layers of the PIN devices include a coupled quantum well structure to provide an opposite index of refraction change for different DC bias voltages. An RF signal used to modulate the light beam is applied to the two arms in phase and causes the index of refraction in the intrinsic layers of the two PIN devices to change in opposite directions so that a push-pull type drive is achieved without requiring 180° out-of-phase RF drive signal.

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patent: 2002/0071622 (2002-06-01), Betts et al.
patent: 0 674 206 (1995-09-01), None
patent: 0 881 526 (1998-12-01), None
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Cartledge, J.C., “Comparison of effective alpha-parameters for semiconductor Mach-Zehnder optical modulators,” Mar. 1998, pp. 372-379, Journal of Lightwave Technology, vol. 16, No. 3.
Rolland, C. et al., “10 Gbit/s, 1.56 micron multiquantum well InP/InGaAsP Mach-Zehnder optical modulator,” Mar. 1993, pp. 471-472, Electronics Letters, vol. 29, No. 5.
U.S. Appl. No. 10/283,947, filed Oct. 30, 2002, entitled “Quantum-Confined Stark Effect Quantum-Dot Optical Modulator”.
C. Thirstrup Refractive Index Modulation based on Excitonic Effects in GaInAs-InP Coupled Asymmetric Quantum Wells, IEEE J. Quantum Electron., vol. 31, No. 6, Jun. 1995, pp. 988-996.

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