Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2006-08-15
2006-08-15
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C451S006000
Reexamination Certificate
active
07091053
ABSTRACT:
A method and apparatus for the topographical profiling of a raw substrate is carried out during in-line processing of the substrate during which additional films and structures have been formed over the raw substrate surface. The method includes forming a dielectric film over the substrate surface and forming a metal film over the dielectric film. The structure is polished and monitored during various stages of the polishing operation. An interferometer is used to monitor the surface being polished and to distinguish between regions where metal remains and regions in which metal has been removed and the underlying dielectric material exposed. Topographical data, such as a substrate map, is generated by monitoring the time at which the metal film is removed from various spatial locations across the substrate. The substrate map may be generated during polishing, for in-line monitoring.
REFERENCES:
patent: 6485354 (2002-11-01), Wolf
patent: 6568989 (2003-05-01), Molnar
patent: 2005/0026542 (2005-02-01), Battal et al.
Duane Morris LLP
Pert Evan
Taiwan Semiconductor Manufacturing Company
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