In-line overlay measurement using charged particle beam system

Details In-line overlay measurement using charged particle beam system In-line overlay measurement using charged particle beam system

2011-08-30

2011-08-30

Dunn, Drew A (Department: 2857)

Data processing: measuring, calibrating, or testing

Calibration or correction system

Position measurement

C702S084000, C250S548000, C250S221000, C250S559300, C356S401000, C356S237400, C356S237500

Reexamination Certificate

active

08010307

ABSTRACT:
A method and system for controlling an overlay shift on an integrated circuit is disclosed. The method and system comprises utilizing a scanning electron microscope (SEM) to measure the overlay shift between a first mask and a second mask of the circuit after a second mask and comparing the overlay shift to information about the integrated circuit in a database. The method and system includes providing a control mechanism to analyze the overlay shift and feed forward to the fabrication process before a third mask for error correction. A system and method in accordance with the present invention advantageously utilizes a scanning electron microscope (SEM) image overlay measurement after the fabrication process such as etching and chemical mechanical polishing (CMP).

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