Impurity measuring method for Ge substrates

Chemistry: analytical and immunological testing – Process or composition for determination of physical state... – Surface area – porosity – imperfection – or alteration

Reexamination Certificate

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C436S178000, C438S014000

Reexamination Certificate

active

07399635

ABSTRACT:
The present invention provides an impurity measuring method comprising the steps of dropping a drop of a first solution on the surface of a substrate to be measured, moving the drop dropped on the surface of the substrate so that the drop is kept in contact with the surface and collects an impurity absorbed on the surface, recovering the drop after the movement and analyzing the recovered drop by chemical analysis to determine the type and concentration of the impurity, characterized in that the first solution is phobic to the substrate and the substrate consists substantially of Ge. The method is of particular importance for measuring metallic contamination on the surface of Ge substrates.

REFERENCES:
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patent: 6620632 (2003-09-01), Koveshnikov et al.
patent: 2002/0052072 (2002-05-01), Hirose
patent: 2004/0076813 (2004-04-01), Han et al.
patent: 0 339 463 (1989-02-01), None
Hellin et al.Validation of Vapor Phase Decomposition-Droplet Collection-Total Reflection X-ray Fluorescence Spectrometry for Metallic Contamination Analysis of Silicon Wafers, TXRF 2003 Conference Hyogo, Japan.
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Hellin et al.Determination of Metallic Contaminants on GE Wafers using direct-and Droplet Sandwich etch-Total Reflection X-ray Fluorescence Spectrometry, pp. 2093-2104, 2003. Spectrochimica Acta Part B. vol. 58 No. 12; XP002323124.
S. Pahlke et al.Determination of Ultra Trace Contaminants on Silicon Wafer Surfaces Using Total-Reflection X-ray Flurorescence TXRF “state-of-the-art”; Spectrochimica Acta Part B, vol. 56 No. 11, Nov. 30, 2001; XP002323125.
A. Shimazaki, et al.Chemical Analysis of Ultratrace Impurities in SiO2 Films, Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics, Tokyo, Japan, Sep. 30, 2004, pp. 281-284; XP002138722.
McDaniel, et al.Impurity Measurements in Semiconductor Materials Using Trace Element Accelerator Mass Spectrometry, Nuclear Instruments & Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms, North Holland Publishing Company, Amsterdam, NL. vol. 190, No. 1-4, May 2002, pp. 826-830; XP004351657.
European Patent Office Search Report, filed in Application No. 04447274, mailed on Apr. 15, 2005.

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