Impurity-induced seeding of polycrystalline semiconductors

Details Impurity-induced seeding of polycrystalline semiconductors Impurity-induced seeding of polycrystalline semiconductors

1991-05-06

1993-09-07

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

148 332, 437109, 437233, 437247, 257 49, H01L 2900

Patent

active

052425070

ABSTRACT:
A semiconductor fabrication process improves the crystal structure of a polycrystalline semiconductor. Adding impurities in large quantities causes an acceleration of the crystallization without noticeably increasing the number of spontaneous nucleations in the material. The result is a region of relatively larger crystalline grains within the doped region which extend approximately 1 .mu.m into the undoped region by the time the entire material has crystallized. Junction devices can be created with better electrical characteristics than ordinary polycrystalline semiconductor devices due to fewer grain boundaries at the electrical junctions. One fabrication technique can result in single crystal devices. Another implementation shows a method for fabricating improved polycrystalline vertical diodes such as solar cells.

REFERENCES:
patent: 4379020 (1983-04-01), Glaeser et al.
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4755865 (1988-07-01), Wilson et al.
patent: 4762801 (1988-08-01), Kapoor
patent: 4952526 (1990-08-01), Dribat et al.
patent: 4959700 (1990-09-01), Yamazaki
M. T. Duffy et al., "LPCVD Polycrystalline Silicon: Growth and Physical Properties of . . .", RCA Review, vol. 44, Jun. 1983, pp. 313-325.
H. F. Bare et al., "Ion Implanted Contacts to a --Si:H Thin-Film Transistors", IEEE Electron Device Letters, vol. 7, No. 7, Jul. 1986.
S. J. Krause et al., "Effect of Transient Annealing on Grain Growth and Structure of Polycrystalline Si Films", Inst. Phys. Conf. Ser. No. 76, Sec. 3, Mar. 1985, pp. 105-110.
McCarthy et al., "The Properties of Phosphorus in Polycrystalline Si-ANMR Study", Mar. Res. Soc. Symp. Proc., vol. 71, 1986, pp. 375-378.
S. Wolf et al., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, CA (1986) pp. 305-306.
R. B. Iverson et al., Dose Dependence of Crystallization in Implanted Polycrystalline Silicon Films on SiO.sub.2, Applied Physics Letters, vol. 52, No. 8, Feb. 22, 1988, pp. 645-647.
Y. Wade et al., Grain Growth Mechanism of Heavily Phosphorus-Implanted Polycrystalline Silicon, Journal of Electrochemical Society: Solid State Science and Technology, Sep. 1978, pp. 1499-1504.
H. Yamamoto et al., Enhancement of Lateral Solid Phase Epitaxial Growth . . . , Applied Physics Letters 46 (3), Feb. 1, 1985, pp. 268-270.
K. Zellama et al., Crystallization in Amorphous Silicon, Journal of Applied Physics 50 (11), Nov. 1979, pp. 6995-7000.

Affiliated with

Also associated with

Rating

Impurity-induced seeding of polycrystalline semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Impurity-induced seeding of polycrystalline semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impurity-induced seeding of polycrystalline semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-484588