Fishing – trapping – and vermin destroying
Patent
1995-05-24
1998-05-19
Niebling, John
Fishing, trapping, and vermin destroying
437950, H01C 21385
Patent
active
057535302
ABSTRACT:
A solid phase diffusion process using boron silicide film as diffusion source to improve controllability of diffusion of boron impurity into a silicon substrate in order to achieve a shallow junction. The process includes: cleaning the surface of a Si substrate by removing the native oxide film thereof to expose an active surface; treating the active surface to form thereon a boron silicide film as an impurity source; and introducing boron impurity from the boron silicide film into the Si substrate to form a boron diffusion layer. In this manner, a boron diffusion layer having a high surface concentration and a shallow junction can be formed because the boron silicide film is formed directly on the surface of the Si substrate. Because the boron silicide film is chemically and physically stable, an improved diffusion controllability is obtained. The diffusion controllability is further improved by accurately evaluating the impurity film optically during the fabrication process. A structure composed of a boron diffusion layer and a boron silicide region provides a high speed, highly integrated, and highly reliable semiconductor device, particularly when the boron silicide region is disposed between an impurity region and an electrode metal.
REFERENCES:
patent: 3338697 (1967-08-01), Aoki et al.
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4395433 (1983-07-01), Nagakubo et al.
patent: 4441932 (1984-04-01), Akasaka et al.
patent: 4737471 (1988-04-01), Shirato et al.
patent: 4778774 (1988-10-01), Blossfeld
patent: 4791074 (1988-12-01), Tsunashima et al.
patent: 4861729 (1989-08-01), Fuse et al.
patent: 4935386 (1990-06-01), Nakagawa et al.
patent: 5032532 (1991-07-01), Mori et al.
patent: 5086016 (1992-02-01), Brodsky et al.
patent: 5124272 (1992-06-01), Saito et al.
patent: 5162263 (1992-11-01), Kunishima
patent: 5171708 (1992-12-01), Kakayama et al.
patent: 5179034 (1993-01-01), Mori et al.
patent: 5220405 (1993-06-01), Barbee et al.
patent: 5366922 (1994-11-01), Aoki et al.
Akamine Tadao
Aoki Kenji
Kojima Yoshikazu
Saito Naoto
Mulpuri S.
Niebling John
Seiko Instruments Inc.
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