Impurity doping method with adsorbed diffusion source

Details Impurity doping method with adsorbed diffusion source Impurity doping method with adsorbed diffusion source

1992-03-27

1996-07-02

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437146, 437160, 437162, 437163, 437164, H01L 21385

Patent

active

055321852

ABSTRACT:
The surface of a silicon wafer is cleaned to expose chemically active surface. Diborane gas is fed to the exposed active surface for adsorbing boron to the active surface. The adsorbed boron on the silicon wafer works as an impurity diffusion source. Boron is diffused from the impurity diffusion source into the silicon wafer to make an impurity diffusion layer by heat treatment. The amount of diborane gas fed to the active surface is set in an amount at which the sheet resistance of the impurity diffusion layer does not depend on variations in feed amount.

REFERENCES:
patent: Re33326 (1990-09-01), Ebata et al.
patent: 3458367 (1969-07-01), Yasufuku
patent: 3506508 (1970-04-01), Nickl
patent: 3540950 (1970-11-01), Joseph
patent: 3576685 (1971-04-01), Swann et al.
patent: 3888706 (1975-06-01), Dingwall
patent: 3966515 (1976-06-01), Guthrie
patent: 4100310 (1978-07-01), Ura et al.
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4213807 (1980-07-01), Rosnowski
patent: 4224088 (1980-09-01), Komatsu et al.
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4279671 (1981-07-01), Komatsu
patent: 4381202 (1983-04-01), Mori et al.
patent: 4382099 (1983-05-01), Legge et al.
patent: 4395433 (1983-07-01), Nagakubo et al.
patent: 4441932 (1984-04-01), Akasaka et al.
patent: 4465529 (1984-08-01), Arima et al.
patent: 4475279 (1984-10-01), Gahle
patent: 4503598 (1985-03-01), Vora et al.
patent: 4569701 (1986-02-01), Oh
patent: 4626450 (1986-12-01), Tani et al.
patent: 4677736 (1987-07-01), Brown
patent: 4697198 (1987-09-01), Komori et al.
patent: 4737471 (1988-04-01), Shirato et al.
patent: 4784968 (1988-11-01), Komori et al.
patent: 4789644 (1988-12-01), Meda
patent: 4791074 (1988-12-01), Tsunashima et al.
patent: 4855258 (1989-08-01), Allman et al.
patent: 4861729 (1989-08-01), Fuse et al.
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4879255 (1989-11-01), Deguchi et al.
patent: 4891326 (1990-01-01), Koyanagi
patent: 4907048 (1990-03-01), Huang
patent: 4912061 (1990-03-01), Nasr
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4914492 (1990-04-01), Matsumoto
patent: 4931411 (1990-06-01), Tigelaar et al.
patent: 4933994 (1990-06-01), Orban
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 4939103 (1990-07-01), Szolgyemy
patent: 4940505 (1990-07-01), Schachameyer et al.
patent: 4948744 (1990-08-01), Kita
patent: 4962726 (1990-10-01), Matsushita et al.
patent: 4966861 (1990-10-01), Mieno et al.
patent: 4968639 (1990-11-01), Bergonzoni
patent: 4996168 (1991-02-01), Ozaki et al.
patent: 5011789 (1991-04-01), Burns
"Method for Making Devices Having Field Gradients at Junction Edges"; Research Disclosure (1989) Jul., No. 303.
"A Stacked-Source-Drain MOSFET Using Selective Epitaxy"; Makino et al; 1046 B Extended Abstracts/Spring Meeting; 88-1 (1988) May 15-20 Princeton.
"Doping Reaction of PH.sub.3 and B.sub.2 H.sub.6 With Si(100)"; Yu et al.; 931 Jr. of App. Physics, 59 (1986) Jun., No. 12.
"A Metal-oxide-silicon field-effect transistor made by means of Solid-Phase doping"; Gong et al; 931 Jr of App. Physics; 65 (1989) 1 Jun., No. 11.
"Simple-Structured PMOSFET Fabricated Using Molecular Layer Doping"; Nishizawa et al; 1990 IEEE.
"Silicon Processing for the VLSI Era"; Wolfe et al; vol. 1--Process Technology.
"The Dielectric-Capped Self-Aligned Titanium Disilicide Process"; Tang et al; 1988 Symposium on VLSI Technology; May 10-13, 1988.
"VLSI Fabrication Principles"; Ghandhi; Rensselaer Polytechnic Institute pp. 140-177, 214-216, 231-235.
"Nikkei High Tech Report"; vol. 4, No. 7, Feb. 13, 1989.
Leung, D. L., et al., "CMOS Devices Fabricated in Thin Epitaxial Silicon on Oxide", 1989 IEEE SOS/SOI Technology Conference Oct., 1989, pp. 74-75.

Affiliated with

Also associated with

Rating

Impurity doping method with adsorbed diffusion source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Impurity doping method with adsorbed diffusion source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impurity doping method with adsorbed diffusion source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1506237