Impurity doping apparatus

Details Impurity doping apparatus Impurity doping apparatus

1999-11-05

2000-08-22

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

25049221, H01J 3736

Patent

active

06106629&

ABSTRACT:
An impurity doping apparatus for fabricating a liquid crystal display simplifies processes for heating a substrate and doping the substrate with impurities by providing: a substrate supporter on which the substrate is mounted, a first gun disposed above and at a fixed distance from the substrate supporter for supplying a heating gas for heating the substrate, a second gun adjacent to the first gun which dopes the heated with impurity ions, a transferring part for moving the first and second guns to a horizontal or vertical direction, a driver providing the transferring part with a driving force to the horizontal or vertical direction, and a controller controlling an moving operation of the transferring part.
The apparatus: improves productivity; causes no heat damage to the substrate, since the process is carried out at low temperature; simplifies the total process by skipping an activating process accompanied by an impurity-ion doping step; and reduces the total volume of the apparatus, as no separate heating or cooling means is required, thereby also decreasing the total cost for the process.

REFERENCES:
patent: 5574280 (1996-11-01), Fuji et al.

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