Impurity-doped semiconductor laser device for single wavelength

Details Impurity-doped semiconductor laser device for single wavelength Impurity-doped semiconductor laser device for single wavelength

1989-02-23

1990-05-22

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 16, 357 17, 357 61, H01S 319

Patent

active

049282859

ABSTRACT:
An impurity-doped double-heterostructure semiconductor laser adapted for single-longitudinal-mode operation is disclosed which includes a semiconductive substrate and a mesa of double-heterostructure formed over the substrate. The mesa comprises an active layer serving as a light-emitting layer, a waveguiding layer adjacent to the active layer and clad layers interposing the active layer and the waveguiding layer therebetween. A high-resistively layer is formed to bury the lateral surfaces of the mesa. The active layer contains impurities of a rare earth element with a previously selected concentration. The limited concentration of impurities is high enough to confine only light components falling within a specific range of wavelength, of all the light components produced in the active layer when the laser device is operative, within the active layer so as to provide single wavelength laser oscillation and low enough to inhibit the initiation of spontaneous emission of the rare earth element within the active layer. For example, the concentration may be set to 1.times.10.sup.18 cm.sup.-3 or below.

REFERENCES:
patent: 4132960 (1979-01-01), Streifer et al.
patent: 4193044 (1980-03-01), Morrison et al.
patent: 4737960 (1988-04-01), Tsang
Appl. Phys. Lett., 50, 1313; J. P. Van der Ziel et al.; May 11, 1987; "Single Longitudinal Mode Operation of Er-Doped 1.5 .mu.m InGaAsP Lasers".
Appl. Phys. Lett., 49, 1686; W. T. Tsang and R. A. Logan; Dec. 22, 1986; "Observation of Enhanced Single Longitudinal Mode Operation in 1.5 .mu.m GaInAsP Erbium-Doped Semiconductor Injection Lasers".

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