Impurity concentrator and analyzer

Details Impurity concentrator and analyzer Impurity concentrator and analyzer

1996-09-10

1998-05-05

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

117 89, 117 93, 117200, 117900, C30B 3500

Patent

active

057468290

ABSTRACT:
The invention provides a method for concentrating impurity contained in a semiconductor crystal sample 11 by irradiating repeatedly a specified position of the semiconductor crystal sample 11 with a laser beam having a specified intensity by means of a laser oscillator 13. Then the invention provides a method for analyzing impurity contained in the impurity concentrated area of the semiconductor crystal sample 11 in high sensitivity by means of a specified physical analyzing means. According to demand, a method of the invention concentrates impurity by means of a laser beam after forming an insulating film such as an oxide film and the like transparent to the laser beam on the surface of the semiconductor crystal sample. At the same time, the invention provides a concentrator and an analyzer to be used for these concentrating method and analyzing method.

REFERENCES:
patent: 5298452 (1994-03-01), Meyerson
patent: 5463978 (1995-11-01), Larkin et al.
patent: 5554304 (1996-09-01), Suzuki
Arrowsmith, "Laser Ablation of Solids for Elemental Analysis by Inductively Coupled Plasma Mass Spectrometry", Anal. Chem. 1987, 59, pp. 1437-1444.

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