Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Analysis and verification
Reexamination Certificate
2011-08-02
2011-08-02
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Analysis and verification
C716S050000, C716S054000, C716S055000, C716S056000, C257S101000, C257S219000, C257S335000, C257S655000, C438S302000
Reexamination Certificate
active
07992108
ABSTRACT:
First and second evaluation substrates are prepared, a direction perpendicular to a surface of the first evaluation substrate being defined by first indices, and the direction defined by the first indices being inclined from a normal direction of a surface of the second evaluation substrate. Ion implantation is performed for the first evaluation substrate in a vertical direction. Ion implantation is performed for the second evaluation substrate by using an ion beam parallel to the direction defined by the first indices. Impurity concentration distributions in a depth direction of the first and second evaluation substrates are measured. A first impurity concentration distribution on an extension line of an ion beam and a second impurity concentration distribution in a direction perpendicular to the extension line are predicted from the measured impurity concentration distributions of the first and second evaluation substrates.
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Dinh Paul
Fujitsu Limited
Fujitsu Patent Center
Nguyen Nha T
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