Impurity band conduction detector having photoluminescent layer

Details Impurity band conduction detector having photoluminescent layer Impurity band conduction detector having photoluminescent layer

1989-09-06

1991-03-19

Hille, Rolf

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 32, 357 16, 357 29, 357 61, 2503384, 250349, 25037001, H01L 2714

Patent

active

050015320

ABSTRACT:
An impurity band conduction (IBC) infrared detector is provided with a photoluminescent (PL) layer proximate the blocking layer of the device. The PL layer comprises a narrow band-gap semiconductor material selected for generating long wavelength infrared (LWIR) photoluminescent photons in response to incident photons of selected spectra. The PL layer improves the quantum efficiency of IBC devices in detecting incident photons in the short wavelength infrared (SWIR), ultraviolet (UV), and X-ray spectra. The thickness of the PL layer can be varied to optimize the photoluminescent response to incident photons of a selected spectrum. In a back-illuminated detector array, absorption of a SWIR photon in the PL layer results in one or more LWIR photons emitted in a time that is sufficiently shorter than the multiplexer frame time. The PL layer should be several times thicker than the absorption length of the SWIR photon, and the luminescent photons should not be reabsorbed by the PL layer or strongly reflected by the interface with the blocking layer.

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