Metal treatment – Compositions – Heat treating
Patent
1978-04-24
1979-10-16
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
357 23, 357 24, 357 91, H01L 1114, H01L 2978, H01L 2934, H01L 21265
Patent
active
041712293
ABSTRACT:
The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A thin n-type region is implanted in a portion of the p-type channel region of an FET device adjacent to the drain diffusion. This structure increases the charge transfer efficiency for the cell and reduces its sensitivity of the threshold voltage to the source-drain voltage. The gate for the device has a substantial overlap over the drain and a minimal overlap over the source and the gate to drain capacitance per unit area is maximized by maintaining a uniformly thin oxide layer across the gate region.
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Klepner, "One-Device Storage Cell . . ." IBM-TDB, 19 (1976), 458.
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Abbas et al., "Hot Carrier . . . in IGFET'S", Appl. Phys. Letts. 27 (1975), 147 & 148.
Simi Victor M.
Soderman Donald A.
Hoel John E.
International Business Machines - Corporation
Roy Upendra
Rutledge L. Dewayne
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