Improved nonvolatile memory circuit using a dual node floating g

Details Improved nonvolatile memory circuit using a dual node floating g Improved nonvolatile memory circuit using a dual node floating g

1985-10-03

1987-08-04

Moffitt, James W.

Static information storage and retrieval

Floating gate

Particular biasing

365228, G11C 1140

Patent

active

046850830

ABSTRACT:
An improved nonvolatile memory has an adaptive system to regulate the charging current supplied to store data on nonvolatile storage nodes in order to provide acceptability low strain on the tunnel oxide and to compensate for process variations and change in the Fowler-Nordheim tunnel oxide transport characteristics caused by electron trapping over time.

REFERENCES:
patent: 4393481 (1983-07-01), Owen et al.
patent: 4404475 (1983-09-01), Drori et al.
patent: 4510584 (1985-04-01), Dias et al.

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