Coating processes – Electrical product produced – Condenser or capacitor
Patent
1986-01-28
1987-07-21
Lusignan, Michael R.
Coating processes
Electrical product produced
Condenser or capacitor
134 21, 134 34, 156345, 156646, 427240, 4272555, B08B 504, B44C 122, B05D 512, C23C 1308
Patent
active
046817760
DESCRIPTION:
BRIEF SUMMARY
The invention relates to an improved apparatus for double floating transport and processing of wafers.
In for instance the Dutch Patent Application Nos. 8 103 979 and 8 300 649 of applicant systems are described for double floating transport and processing of wafers, whereby in the tunnel passageway during processing the wafer with a linear displacement thereof does not intentionally rotate.
However, with some processings it is desirable, that temporary such wafer rotation takes place.
The present invention satisfactorily solves the problem, whereby during such processing a rotation of the wafer is accomplished by means of flows of fluid, which, discharged from the supply manifolds, strike the wafer in the desired direction of wafer rotation and subsequently are carried off through discharge manifolds.
Thereby by increasing the tunnel passage height it is possible to attain a very large number of revolutions per minute.
Furthermore, it is often desirable, that the wafer at least temporarily, for instance one second, has a negligible displacement in linear direction.
To meet such requirement, a following positive feature of the apparatus is, that as seen in the direction of linear displacement of the wafer, in the central section of rotation a lower pressure is maintained in the tunnel than in the adjacent tunnel sections.
With for instance cleaning and rinsing of the wafer it is advisable, that a large number of high intensity flows of liquid strike the wafer surface. Thereby such medium must be removed as fast as possible.
To enable this, a following positive feature is, that as seen in direction of linear displacement of the wafer, in the tunnel sidewalls only a restricted number of groups of supply manifolds are positioned, however extending over at least the width of the wafer.
As a result, the size of these channels can be considerably larger.
A following very positive feature is, that the wafer rotation cannot only be accomplished by means of flows of liquid, but also by means of flows of gaseous medium. Thereby an improved processing can take place, with a complete change of medium, if required.
Furthermore, the apparatus can be structured such, that this wafer rotation can be maintained during a subsequent displacement of this wafer.
Thereby another positive feature is, that these flows, accomplishing the wafer rotation, cooperate with flows of processing medium, establishing the linear wafer displacement.
Furthermore, it is of importance, that as the supply pressure is maximal in that tunnel section, also the discharge of medium is maximal, enabling the pressure in this tunnel section to remain within allowable parameters.
In addition, it is desirous, that as the flows of liquid result in a surface tension of the tunnel sidewalls, such tension is as small as possible.
For that reason another positive feature is, that the tunnel height in the process section is at least locally considerably larger than is required for a double floating wafer transport with a minimum consumption of transport medium.
The required locally increased pressure in the tunnel passageway may not affect the double floating wafer transport in that tunnel, as for instance in the pressure adaption modules towards or from vacuum modules.
Therefore another positive feature is, that in the tunnel displaceable valve plates are incorporated, which during such processing seal off the adjacent tunnel sections from the processing section.
Furthermore, the spinning velocity can be very high, for instance 10,000 rpm, as could be required for an improved processing, such as the fast removal of liquid remnants from the water surface.
The spin system is also very suitable to apply a coating on a wafer, whereby in particular the considerable acceleration and de-acceleration of the wafer are important.
Furthermore, any material for the process section, such as for instance teflon for a dopant coater, can be used.
Furthermore, in the process area of the process section discharge manifolds may not be positioned, with almost entirely a discharge
REFERENCES:
patent: 4495024 (1985-01-01), Bok
patent: 4544446 (1985-10-01), Cady
Integrated Automation Limited
Lusignan Michael R.
Olsen Warren E.
Semmes David H.
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