Improved high voltage MOS transistor with field plate layers for

Details Improved high voltage MOS transistor with field plate layers for Improved high voltage MOS transistor with field plate layers for

1984-09-28

1986-09-30

Davie, James W.

357 41, 357 53, H01L 2978

Patent

active

046149597

ABSTRACT:
A metal oxide semiconductor device is featured by the provision of at least two field plate elements interposed by an insulating layer. The field plate elements are connected from a drain electrode and a source electrode. Otherwise, they are isolated from the respective drain electrode, source electrode, and gate electrode. Each of the field plate elements consists of Al, polycrystalline silicon, or the like. An extensive conductive layer is provided which overlaps vertically each of the field plate elements.

REFERENCES:
patent: 3573571 (1971-04-01), Brown et al.
patent: 3602782 (1971-08-01), Klein
patent: 3936865 (1976-02-01), Robinson
patent: 4058822 (1977-11-01), Awane et al.

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