Impregnation of aluminum interconnects with copper

Details Impregnation of aluminum interconnects with copper Impregnation of aluminum interconnects with copper

1983-06-06

1984-12-25

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

357 67, 427 90, H01L 2192, H01L 21285

Patent

active

044894821

ABSTRACT:
A method for impregnating copper into aluminum interconnect lines on a semiconductor device is disclosed. In a first embodiment, an interconnect pattern is formed on an aluminum layer by etching while the aluminum is substantially free from copper, and the copper is thereafter introduced to the formed interconnect lines. In a second embodiment, copper is introduced to the aluminum layer prior to formation of the desired interconnect pattern. The copper-rich layer is removed from the areas to be etched prior to etching. The method facilitates chlorine plasma etching of the aluminum which is inhibited by the presence of copper. The method is also useful with various wet etching processes where the formation of a copper-rich layer is found to stabilize the aluminum layer during subsequent processing .

REFERENCES:
patent: 3725309 (1973-04-01), Ames et al.
patent: 4335506 (1982-06-01), Chiu et al.
Colclaser, R. A., Microelectronics: Processing and Device Design, John Wiley & Sons, New York, 1980, pp. 44-48, 104-109.

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