Impregnation of a solid from the gas phase

Details Impregnation of a solid from the gas phase Impregnation of a solid from the gas phase

1990-12-14

1992-07-07

Scott, Jr., Leon

Coherent light generators

Particular active media

Gas

372 39, H01S 322

Patent

active

051289547

ABSTRACT:
Post-growth gas-impregnation of an ionic crystal is provided to achieve a high level of caged neutral diatomic species or charged diatomic species, where all other internal degrees of freedom of the species, except the vibrational, are frozen. In the former case, the neutral diatomic species (molecules) enter interstitially, while in the latter case, the charged diatomic species (anions) substitute for anions on the crystal lattice. Such a system provides an efficient mid-infrared, solid-state laser that can be pumped by a laser diode. Other uses include magnetic (Faraday) rotators, electro-optic switches, and Q-switches. The impregnation process introduces the species into the host lattice at a temperature below the melting point of the host crystal, and preferably at a phase transition of the crystal, followed by slow cooling. A pressure greater than atmospheric pressure is used to introduce the tenant molecule interstitially, while a pressure of at least 1 atmosphere is used to introduce the dopant anion substitutionally.

REFERENCES:
patent: 4638485 (1987-01-01), Gellermann

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