Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2009-08-07
2011-11-08
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S775000, C257S776000
Reexamination Certificate
active
08053871
ABSTRACT:
A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.
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Preliminary French Search Report and Written Opinion, FR 06 09038, dated May 10, 2007.
Noda, et al., “Selective Silicidation of Co Using Silane or Disilane for Anti-Oxidation Barrier Layer in Cu Metallization,” Japanese Journal of Applied Physics, vol. 43, No. 9A, Sep. 2004, pp. 6001-6007; XP002432923.
Caubet Pierre
Dumas Laurin
Jenny Cécile
Gardere Wynne & Sewell LLP
Loke Steven
STMicroelectronics S.A.
Thomas Kimberly M
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