Metal treatment – Compositions – Heat treating
Patent
1983-04-11
1985-01-22
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 148175, 148187, 357 63, 357 91, H01L 21265, H01L 700
Patent
active
044949960
ABSTRACT:
A semiconductor device comprising an insulating substrate such as sapphire and a semiconductor element region formed on the substrate, wherein an insulating layer containing yttrium or a lanthanide element is interposed between the substrate and semiconductor element region. A method of manufacturing a semiconductor device such as MOS/SOS wherein yttrium or a lanthanide element is ion implanted into an interface between the substrate and the semiconductor film formed on the substrate to form an insulating layer containing yttrium or a lanthanide element at the interface.
REFERENCES:
patent: 3674552 (1972-07-01), Heywang
patent: 4177084 (1979-12-01), Lau et al.
patent: 4178191 (1979-12-01), Flatley
Homma et al., Jap. Jour. Appl. Phys. 21 (1982) 890.
Jastrzebski et al., Jour. Crystal Growth, 58 (1982) 37.
Rao, D. B., Jour. Crystal Growth, 58 (1982) 79.
Maeyama et al., Jap. Jour. Appl. Phys. 21 (1982) 744.
Y. Yamamoto, I. H. Wilson and T. Itoh, "Gettering Effect by Oxygen Implantation in SOS," Appl. Phys. Lett. vol. 34, vol. 6.15, 15, Mar. 1979.
Ohno Jun-ichi
Ohta Takao
Roy Upendra
Tokyo Shibaura Denki Kabushiki Kaisha
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