Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Reexamination Certificate
2005-05-18
2010-11-16
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
C257S609000, C438S518000
Reexamination Certificate
active
07834422
ABSTRACT:
This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallized to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.
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English tranlation of Japanese Patent JP 2002368252 by Sasaki ( Dec. 2002).
English translation of Japanese Patent JP2001023917 by Iwao ( Jan. 2001 ).
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Andresen Soren
Dzurak Andrew Steven
Gauja Eric
Hearne Sean
Hopf Toby Felix
Nguyen Thinh T
Qucor Pty. Ltd.
Wood Phillips Katz Clark & Mortimer
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