Implantation profile control with surface sputtering

Details Implantation profile control with surface sputtering Implantation profile control with surface sputtering

1989-04-24

1992-01-14

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

437 24, 437 26, 437 62, 148DIG158, H01L 21265

Patent

active

050807307

ABSTRACT:
An ion implantation process for producing a buried insulating layer of silicon dioxide in a silicon substrate which takes advantage of the effects of surface erosion and sputtering inherent to the ion implantation process. The process allows the production of an insulating layer buried within a silicon semiconductor wherein the width of the insulating layer can be contoured by controlling the beam energy during implantation.

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"Sputter Etch Removal Rates of Insulators, Semiconductors, and Conductors", Larry L. Fritz, Solid State Technology, Dec. 1971, pp. 43-48.
"Nucleation and Growth of SiO.sub.2 Precipitates in SOI/SIMOX Related Materials-Dependence Upon Damage and Atomic Oxygen Profiles", Nuclear instruments and methods in Physics research, Section B (Beam interactions with materials and Atoms) Mar. 1989, vol. B39, No. 1-4, Hemment et al., pp. 210-214.

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