Fishing – trapping – and vermin destroying
Patent
1990-06-26
1991-05-07
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 16, 437 35, 437 80, 437 52, 437919, 357 236, H01L 21265
Patent
active
050136739
ABSTRACT:
An ion implantation method comprising doping a trench sidewall formed in the surface of a semiconductor substrate, with impurities by intermittently rotating step ion implantation carried out in the state that said sidewall is angled with respect to an ion beam, wherein;
REFERENCES:
patent: 3908262 (1975-09-01), Stein
patent: 3914857 (1975-10-01), Goser
patent: 4437226 (1984-03-01), Soclof
patent: 4525919 (1985-07-01), Fabian
patent: 4756793 (1988-07-01), Peek
patent: 4824793 (1989-04-01), Richardson et al.
patent: 4918027 (1990-04-01), Fuse
patent: 4921815 (1990-05-01), Miyazawa
Kaim, Robert E., "Improved VLSI Device Yields Through Control of Implant Angle", 2/90, Solid State Technology, p. 103.
"Beam Scanning System for Large Tilt Angle Ion Implantation" by M. Sasaki et al.; Nuclear Instruments and Methods in Physics Research B37/38 (1989), 469-471; North-Holland, Amsterdam.
"A New Isolation Method with Boron-Implanted Sidewalls for Controlling Narrow-Width Effect" by G. Fuse et al.; IEEE Transactions on Electron Devices, vol. ED-34, No. 2, Part 1, Feb. 1987.
Hearn Brian E.
Hugo Gordon V.
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Implantation method for uniform trench sidewall doping by scanni does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Implantation method for uniform trench sidewall doping by scanni, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Implantation method for uniform trench sidewall doping by scanni will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-939289