Implantation before epitaxial growth for photonic integrated...

Details Implantation before epitaxial growth for photonic integrated... Implantation before epitaxial growth for photonic integrated...

2011-04-26

2011-04-26

Graybill, David E (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S013000, C257S432000, C257S101000, C257S102000, C257S103000, C257S099000, C257S098000, C257S466000, C257S459000

Reexamination Certificate

active

07932512

ABSTRACT:
Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.

REFERENCES:
patent: 5023687 (1991-06-01), Tanoue et al.
patent: 2003/0081878 (2003-05-01), Joyner et al.
patent: 2004/0033004 (2004-02-01), Welch et al.
patent: 2005/0135778 (2005-06-01), Dominic et al.
patent: 2006/0065886 (2006-03-01), Shi et al.
patent: 2006/0141682 (2006-06-01), Taylor et al.
patent: 2008/0048225 (2008-02-01), Ahn et al.

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