Implant programmable metal gate MOS read only memory

Details Implant programmable metal gate MOS read only memory Implant programmable metal gate MOS read only memory

1981-01-19

1982-07-27

Heckler, Stuart N.

Static information storage and retrieval

Read only systems

Semiconductive

365178, 357 23, G11C 1700, G11C 1140

Patent

active

043421008

ABSTRACT:
An MOS read only memory or ROM is formed by a process compatible with standard P or N channel metal gate manufacturing methods. The ROM is programmed at a late stage of the process after the metal level of contacts and interconnections has been deposited and patterned. Address lines and gates are polysilicon with an overlying patterned metal layer and output and ground lines are defined by elongated heavily doped regions. Thin gate oxide is formed for every gate position, rather than for only the selected gates as in the prior standard programming method. Each potential MOS transistor in the array is programmed to be a logic "1" or "0" by ion implanting through the polysilicon gates where metal has been removed, using photoresist as a mask.

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