Implant mask reversal process

Details Implant mask reversal process Implant mask reversal process

1984-08-22

1986-04-01

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 148 15, 148187, 357 42, H01L 2122, H01L 2978, H01L 21265

Patent

active

045788596

ABSTRACT:
A reverse mask is formed after the first ion implantation step by applying a second masking material to at least fill the opening in the first mask layer and removing the second mask material to reveal at least a portion of the first mask layer. The first mask layer is then selectively removed with any superimposed second mask layer material thereon. This forms a truly inverse mask. Second conductivity impurities are then introduced through the inverse mask to form self-aligned complementary wells in a substrate.

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patent: 4507847 (1985-04-01), Sullivan
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"Quadruple-Well CMOS-A VLSI Technology"; John Chen; IEDEM 82, pp. 791-792.
"A Simple Metal Lift-Off Process (For 1 Micron Al/5% Cu Lines*)"; Tom Batchelder; Solid State Technology; Feb. 1982; pp. 111-114.
"Lift-Off Metallization of Sputtered Al Alloy Films"; T. Sakurai et al., J. Electrochem. Soc.; vol. 126, No. 7; Jul. 1979; pp. 1257-1260.
"Single-Step Optical Lift-Off Process"; M. Hatzakis; IBM J. Res. Develop., vol. 24, No. 4; Jul. 1980; pp. 452-460.

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