Implant guarded mesa having improved detector uniformity

Details Implant guarded mesa having improved detector uniformity Implant guarded mesa having improved detector uniformity

1991-01-22

1993-01-05

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257191, 257201, 257594, H01L 2714

Patent

active

051775808

ABSTRACT:
A method for fabricating a plurality of semiconductor photodetectors and an array of same produced by the method. The method includes a first step of selectively removing semiconductor material to form a channel within a semiconductor material for physically isolating a first photodetector from a second photodetector, the semiconductor material having a characteristic energy bandgap. The method includes a second step of selectively increasing the carrier concentration of the semiconductor material within a bottom region of the channel for preventing minority charge carriers from diffusing under the channel from a region associated with the first photodetector to a region associated with the second photodetector. The step of selectively removing is accomplished by the steps of providing a patterned mask upon the semiconductor material and selectively removing the underlying semiconductor material through an opening within the mask. The step of selectively increasing the carrier concentration includes a step of ion implanting the semiconductor material through the opening within the mask.

REFERENCES:
patent: 4639756 (1987-01-01), Rosbeck et al.
patent: 4868622 (1989-09-01), Shigenaka
patent: 4931409 (1990-06-01), Nakajima et al.
patent: 4972244 (1990-11-01), Buffet et al.
patent: 5083173 (1992-01-01), Yamada et al.

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