Implant-free heterojunction bioplar transistor integrated circui

Details Implant-free heterojunction bioplar transistor integrated circui Implant-free heterojunction bioplar transistor integrated circui

1992-09-04

1993-12-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437 60, 437133, 148DIG9, H01L 21265

Patent

active

052683150

ABSTRACT:
The disclosed HBT IC process can fabricate npn heterojunction bipolar transistors, Schottky diodes, MIM capacitors, spiral inductors, and NiCr resistors. Two levels of interconnect metal are available. The first level metal is a conventional dielectric-insulated metal conductor. The second level metal includes an air-bridge for contacting the HBT emitters, which are on top of three level mesa structures. It is also an advanced low loss, low capacitance, air dielectric conductor useful for long interconnects and inductors. MIM capacitors are formed by sandwiching silicon nitride between the first layer metal and a capacitor top plate made with landed air-bridge metal. Precision thin film resistors are fabricated by depositing NiCr on silicon nitride. The three-level active mesa structure is etched down to the GaAs substrate, for lateral device isolation, with a truncated pyramidal shape which permits good step coverage of dielectric and metallization layers. The wet etching process uses a composition of H.sub.3 PO.sub.4 :H.sub.2 O.sub.2 :H.sub.2 O in a preferred ratio of about 3:1:25 for the AlGaAs/GaAs system.

REFERENCES:
patent: 4691215 (1987-09-01), Luryi
patent: 4771013 (1988-09-01), Curran
patent: 4981807 (1991-01-01), Jambotkar
patent: 5051372 (1991-09-01), Sasaki
patent: 5166083 (1992-11-01), Bayraktaroglu
Howes et al., "Gallium Arsenide Materials, Devices and Circuits", 1985, pp. 123-143.

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