Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2005-06-21
2005-06-21
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S135000
Reexamination Certificate
active
06909125
ABSTRACT:
We disclose the structure of an electronic device, the method of making the device and the operation of the device. The device is built near the top of a substrate. It has, near the top surface, a buried layer that is electrically communicable to a drain terminal. The device has a body region over the buried layer. A portion of the body region contacts a gate region connected to a gate terminal. The device has a channel region, of which the length spans the distance between the buried layer and a source region, which projects upward from the channel region and is connected to a source terminal. The device current flows in the channel substantially perpendicularly to the top surface of the substrate.
REFERENCES:
patent: 6049108 (2000-04-01), Williams et al.
patent: 6392271 (2002-05-01), Alavi et al.
patent: 6518112 (2003-02-01), Armacost et al.
patent: 6825531 (2004-11-01), Mallikarjunaswamy
Pending U.S. Appl. No. 10/678,028 (TI-33654), Pendharkar et al. “A Low Noise Vertical Variable Gate Control Voltage JFET Device in a BICMOS Process & Methods to Build this Device”.
Pending U.S. Appl. No. 10/623,230 (TI-35213), Howard et al. “Double Diffused Vertical JFET”.
Howard Gregory E.
Swanson Leland S.
Brady III Wade James
Cao Phat X.
Doan Theresa T.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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