Impedance matching network for field effect transistor

Details Impedance matching network for field effect transistor Impedance matching network for field effect transistor

1983-08-12

1984-10-09

Gensler, Paul L.

Wave transmission lines and networks

Coupling networks

With impedance matching

333247, 333 33, 336 65, H01P 500

Patent

active

044764464

ABSTRACT:
An impedance matching network for coupling a microwave transmission line to a field effect transistor (FET). The impedance matching network includes a resistor coupled in shunt with the FET and an inductor connected between the microwave transmission line and the resistor. The inductor is formed by wrapping a conductive wire around a post inserted into a hole formed in a support for the FET.

REFERENCES:
patent: 4004256 (1977-01-01), Duncan
patent: 4243947 (1981-01-01), Glennon
patent: 4314220 (1982-02-01), Ito et al.
patent: 4319209 (1982-03-01), Hara
Naster et al., Silicon-on Sapphire Monolithic Microwave ICs, IEEE Int'l. Solid-State Circuits Conference 1981, Session VII: Microwave Amplifiers, Feb. 19, 1981.
Basawapatna, Design & Performance of a 2 to 18 Ghz Medium Power GaAs MESFET Amplifier, Proc. of 8th European Microwave Conf., Sep. 4-8, 1978.

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