Impedance matching circuitry for radio frequency signal power am

Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling

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333 33, H03F 304

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active

043509584

ABSTRACT:
Impedance matching circuitry is described that utilizes a plurality of series coupled microstrip transmission lines of different characteristic impedances for matching a radio frequency (RF) signal power amplifier to a predetermined output impedance, such as, for example, 50 ohms. Each of the microstrip transmission lines are successively coupled to the relatively low impedance output of a transistor of the power amplifier that is desired to be matched to the predetermined output impedance. Each of the successively coupled microstrip transmission lines has a greater characteristic impedance than the previously coupled microstrip transmission line for achieving the desired impedance match. The series coupled microstrip transmission lines not only match the power amplifier transistor to the predetermined output impedance, but also suppress regenerative oscillations which may occur when the power amplifier transistor is subjected to impedance mismatches. The inventive impedance matching circuitry may be advantageously utilized in the RF signal power amplifier of a base station radio in a mobile radio communication system.

REFERENCES:
patent: 3419813 (1968-12-01), Kamnitsis
patent: 4013974 (1977-03-01), Quine
Kalinikos, "Wideband Transistorized Power Amplifier of the Microwave Band", Instru. & Exp. Tech., vol. 20, No. 1, PT2, Jan.-Feb. 1977, pp. 161-162.

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