Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1991-04-18
1993-12-14
Callahan, Timothy P.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307304, 3072968, H03K 301
Patent
active
052705838
ABSTRACT:
The semiconductor circuit device comprises a substrate bias generating circuit, a substrate voltage detecting circuit, and a substrate impedance adjusting circuit. When the detected substrate voltage decreases below a predetermined level, the substrate impedance adjusting circuit forms a through route between a substrate voltage terminal and any given terminal higher in potential than the substrate voltage terminal, to increase the substrate voltage at high speed, thus stabilizing threshold voltages or operation limit voltages of device elements which are subjected to the influence of the substrate voltage. Further, when the substrate voltage returns to the predetermined level, the substrate impedance adjusting circuit cuts off the formed through route for reduction of power consumption.
REFERENCES:
patent: 4438346 (1984-03-01), Chuang et al.
patent: 4571505 (1986-02-01), Eaton, Jr.
patent: 4670668 (1987-06-01), Liu
patent: 4716307 (1987-12-01), Aoyama
patent: 4794278 (1988-12-01), Vajdic
patent: 5057704 (1991-10-01), Koyanagi et al.
Miyawaki Naokazu
Murakami Kiyoharu
Callahan Timothy P.
Kabushiki Kaisha Toshiba
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