Impatt diode

Details Impatt diode Impatt diode

1987-09-28

1989-08-15

LaRoche, Eugene R.

357 13, 357 16, H01L 2712, H01L 4500, H01L 2990, H01L 29161

Patent

active

048579726

ABSTRACT:
An IMPATT diode having Si-SiGe heterostructure grown on a Si substrate with the SiGe layer being disposed in the generation zone of the IMPATT diode. The SiGe layer may be replaced by a Si/SiGe superlattice.

REFERENCES:
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patent: 4529455 (1985-07-01), Bean et al.
Summers et al., "Variably Spaced Superlattice Energy Filter, a New Device Design Concept for High-Energy Electron Injection", Appl. Phys. Lett., vol. 48, No. 12, Mar. 24, 1986.
Kesan et al., "The Influence of Transit-Time Effects on the Optimum Design and Maximum Oscillation Frequency of Quantum Well Oscillators", IEEE Transactions on Electron Devices, vol. 35, No. 4, Apr. 1988.
"Measurement of the Band Gap of GexSil-X/Si Strained-Layer Heterostructures", Applied Physics Letters, vol. 47, No. 12, Dec., 1985, pp. 1333-1335.
"Indirect Band Gap of Conerently Strained GexSil-x Bulk Alloys on .sctn.001.degree. Silicon Substrates", R. People, Physical Review, vol. 32, No. 2, Jul. 15, 1985.
"Novel Devices by Si-Based Molecular Beam Epitaxy", Wang, Solid State Technology, vol. 28, No. 10, Oct. 1985.
"Low-Frequency Noise of Ion-Implanted Double-Drift Impatt Diodes", D. H. Lee, Proceedings of the IEEE, vol. 6, No. 5, pp. 666-667, May, 1973.

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