Impact ionization amplification apparatus method and system

Details Impact ionization amplification apparatus method and system Impact ionization amplification apparatus method and system

2006-07-14

2009-02-03

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

C257S458000, C257S011000, C257SE29336, C257SE31061

Reexamination Certificate

active

07485950

ABSTRACT:
An input signal comprising electronic carriers is injected into an impact ionization device with a high electric field whereupon the electronic carriers are accelerated toward an electron collector or hole sink and subsequently ionize additional electrons and holes that accelerated toward the electron collector and hole sink respectively. When properly biased an avalanche effect may occur that is proportional to the current injected into the impact ionization device via the input electrode. As a result, the input signal is amplified to provide an amplified signal. The described amplifier may be integrated with an input device such as a photodiode, and a transimpedance output amplifier onto a common substrate resulting in high performance high density sensor arrays and the like.

REFERENCES:
patent: 5509105 (1996-04-01), Roenker et al.
patent: 5602413 (1997-02-01), Morishita
patent: 2003/0030951 (2003-02-01), Green
patent: 2004/0046176 (2004-03-01), Kim et al.

Affiliated with

Also associated with

Rating

Impact ionization amplification apparatus method and system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Impact ionization amplification apparatus method and system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impact ionization amplification apparatus method and system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4107300