Immersion type ISFET

Details Immersion type ISFET Immersion type ISFET

1985-03-18

1987-04-21

Edlow, Martin H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

357 55, 357 2315, 357 29, 204409, H01L 2906, H01L 2966, H01L 2726

Patent

active

046600639

ABSTRACT:
Three-dimensional diode arrays have been produced in semiconductor wafers by a two-step process involving laser drilling and solid-state diffusion.
Holes are first produced in the wafer in various arrays by laser drilling. Under suitable conditions, laser drilling causes little or no damage to the wafer. Cylindrical P-N junctions are then formed around the laser-drilled holes by diffusing an impurity into the wafer from the walls of the hole. A variety of distinctly different ISFET devices is produced.

REFERENCES:
patent: 4056726 (1977-11-01), Harchol
patent: 4471369 (1984-09-01), Anthony et al.
patent: 4527183 (1985-07-01), Anthony et al.
Anthony, "Forming Electrical Interconnections through Semiconductor Wafers," J. Appl. Phys., 52(8), 1981, p. 5340.
Anthony, "Forming Feedthroughs in Laser-Drilled Holes . . . ", IEEE Trans., CHMT-5 (1), 1982, p. 1971.
Anthony, "Diodes Formed by Laser Drilling and Diffusion," J. Appl. Phys., 53(12), 1982, p. 9154.

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