Imaging with gate controlled charge storage

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S059000

Reexamination Certificate

active

10876514

ABSTRACT:
A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.

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patent: WO 97/28558 (1997-08-01), None
Huat Aw Ch et al.—“A 128 ×128-Pixel Standard-CMOS Image Sensor with Electronic Shutter,” IEEE Journal of Solid-State Circuits, IEEE Inc. New York, vol. 31, No. 12, Dec. 1996, pp. 1922-1930.
International Search Report dated Apr. 7, 2005.

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