Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-10-04
1998-03-31
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257443, 257292, 257294, 348196, 348551, H01L 31062, H01L 31113
Patent
active
057341788
ABSTRACT:
An imaging system using an area sensor in which reading of very fine object such as a manuscript, etc. is permitted to be carried out. This imaging system includes an area sensor in which a plurality of pixels are two-dimensionally arranged so that a pixel pitch in an X direction is an integer multiple A of a pixel width and a pixel pitch in a Y direction is an integer multiple B of a pixel length; object driving means for moving an object by the pixel width/length so that in a condition where one of the pixels corresponds to a part of an object, an image of a unit of 1/AB of the part of the object is formed on one of the pixels; and photoelectric conversion control means for allowing the area sensor to carry out photoelectric conversion in a manner synchronized with movement of the object. The system preferably further includes an optical system for carrying out enlargement or contraction adapted to form an image of the unit of 1/AB of the part of the object on the pixel and picture synthesizing means for AB numbered synthesizing image pick-up signals to obtain an image pick-up pattern of the entirety of the object.
REFERENCES:
patent: 4245240 (1981-01-01), Tanaka
patent: 4607287 (1986-08-01), Endo et al.
patent: 4719515 (1988-01-01), Miyagawa et al.
patent: 5561460 (1996-10-01), Katoh
patent: 5608226 (1997-03-01), Yamada et al.
Kabushiki Kaisha Toshiba
Mintel William
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