Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-04-15
2008-04-15
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S440000
Reexamination Certificate
active
07358584
ABSTRACT:
An imaging sensor includes a signal processing section, a photo-current generating and collecting section, and a separating region between the signal processing section and the photo-current generating and collecting section. The photo-current generating and collecting section includes a photodiode well having a first type of conductivity, and a contact associated with the photodiode well. A region surrounds the photodiode well, and is adjacent the separating region and has a second type of conductivity.
REFERENCES:
patent: 4696021 (1987-09-01), Kawahara et al.
patent: 4794279 (1988-12-01), Yamamura et al.
patent: 5698874 (1997-12-01), Hayashi
patent: 5850195 (1998-12-01), Berlien, Jr. et al.
patent: 7217967 (2007-05-01), Han
patent: 2002/0050593 (2002-05-01), Fukunaga et al.
patent: 2002/0125513 (2002-09-01), Inoue
patent: 2003/0218195 (2003-11-01), Raynor
patent: 2005/0062078 (2005-03-01), Han
patent: 2005/0145902 (2005-07-01), Mouli
patent: 2005/0167707 (2005-08-01), Funaki
patent: 09260715 (1997-03-01), None
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Le Thao P.
STMicroelectronics Ltd.
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