Imaging post structures using X and Y dipole optics and a...

Details Imaging post structures using X and Y dipole optics and a... Imaging post structures using X and Y dipole optics and a...

2011-06-28

2011-06-28

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

C430S322000

Reexamination Certificate

active

07968277

ABSTRACT:
A photolithographic method uses different exposure patterns. In one aspect, a photo-sensitive layer on a substrate is subject to a first exposure using optics having a first exposure pattern, such as an x-dipole pattern, followed by exposure using optics having a second exposure pattern, such as a y-dipole pattern, via the same mask, and with the photo-sensitive layer fixed relative to the mask. A 2-D post pattern with a pitch of approximately 70-150 nm may be formed in a layer beneath the photo-sensitive layer using 157-193 nm UV light, and hyper-numerical aperture optics, in one approach. In another aspect, hard baking is performed after both of the first and second exposures to erase a memory effect of photoresist after the first exposure. In another aspect, etching of a hard mask beneath the photo-sensitive layer is performed after both of the first and second exposures.

REFERENCES:
patent: 6063531 (2000-05-01), Singh
patent: 6461774 (2002-10-01), Zimlich
patent: 6553562 (2003-04-01), Capodieci
patent: 6839126 (2005-01-01), Yen
patent: 6875545 (2005-04-01), Eurlings
patent: 6934007 (2005-08-01), Fritze
patent: 7011936 (2006-03-01), Nolscher
patent: 2002/0140920 (2002-10-01), Rosenbluth
patent: 2004/0100764 (2004-05-01), Hanson
patent: 2005/0123837 (2005-06-01), Chen
patent: 2005/0153540 (2005-07-01), Mimotogi
patent: 2005/0221200 (2005-10-01), Chen
patent: 2006/0222962 (2006-10-01), Chen
patent: 2007/0003878 (2007-01-01), Paxton et al.
patent: 2008/0160423 (2008-07-01), Chen et al.
“All refractive hyper NA optics for production immersion lithography,” www.fabtech.org, Sep. 27, 2005.
W. H. Arnold, “Extending 193 nm Optical Lithography,” Semiconductor International, www.reed-electronics.com, Sep. 1, 2006, 7 pgs.
“Technology backgrounder: Immersion Lithography,” IC Knowledge.com, May 2003, 5 pgs.
R.B. Darling, slides titled “EE-527: MicroFabrication—Photolithography”, Jul. 2005, 31 pages, printed from http://www.ee.washington.edu/research/microtech/cam/PROCESSES/photolithographypdf.html.
Nakamura, “Low K1 Contact Hole Formation by Double Line and space Formation Method with Contact Hole Mask and Dipole Illumination,” Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, Jun. 1, 2006.
Nakamura, “Contact Hole Formation by Multiple Exposure Technique in Ultralow K1 Lithography,” Journal of Microlithography, Microfabrication, and Microsystems, May 13, 2005.
Nakao, “0.10MuM Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KRF Excimer Laser as Exposure Light,” Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP May 1, 1999.
Search Report and Written Opinion in PCT/US2007/088901, dated Jul. 23, 2008.
International Preliminary Report on Patentability and Written Opinion of the International Searching Authority dated Jun. 30, 2009 in PCT Application No. PCT/US2007/088901.
Office Action dated Jul. 17, 2009, in U.S. Appl. No. 11/617,776, filed Dec. 30, 2006.
Amendment dated Jul. 28, 2009, U.S. Appl. No. 11/617,776, filed Dec. 30, 2006.
Office Action dated Oct. 30, 2009, U.S. Appl. No. 11/617,776, filed Dec. 30, 2006.
Amendment dated Jan. 27, 2010, U.S. Appl. No. 11/617,776, filed Dec. 30, 2006.
Office Action dated Apr. 14, 2010, U.S. Appl. No. 11/617,776, filed Dec. 30, 2006.
Amendment dated May 3, 2010, U.S. Appl. No. 11/617,776, filed Dec. 30, 2006.
Notice of Allowance dated May 11, 2010, U.S. Appl. No. 11/617,776, filed Dec. 30, 2006.

Affiliated with

Also associated with

Rating

Imaging post structures using X and Y dipole optics and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Imaging post structures using X and Y dipole optics and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Imaging post structures using X and Y dipole optics and a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2640712