Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2007-07-20
2008-10-07
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S198000, C257S183100, C257S623000, C438S312000
Reexamination Certificate
active
07432539
ABSTRACT:
An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-type modulation doped quantum well interfaces that are spaced apart from one another. Incident radiation within a predetermined wavelength resonates within the cavity of a given pixel element for absorption therein that causes charge accumulation. The accumulated charge is related to the intensity of the incident radiation. The heterojunction-thyristor-based pixel element is suitable for many imaging applications, including CCD-based imaging arrays and active-pixel imaging arrays.
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Gordon & Jacobson, PC
Opel, Inc.
Rao Steven H
The University of Connecticut
Weiss Howard
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