Imaging device, method of driving imaging device, and method...

Details Imaging device, method of driving imaging device, and method... Imaging device, method of driving imaging device, and method...

2011-03-01

2011-03-01

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S184000, C257S186000, C257S447000, C257S460000, C257SE31063, C257SE31116, C438S057000, C438S091000, C438S380000, C348S294000

Reexamination Certificate

active

07898051

ABSTRACT:
An imaging device is provided and includes: a photoelectric conversion layer that has a silicon crystal structure and generates signal charges upon incidence of light; a multiplication and accumulation layer that multiplies the signal charges by a phenomenon of avalanche electron multiplication; and a wiring substrate that reads the signal charges from the multiplication and accumulation layer and transmits the read signal charges. The photoelectric conversion layer includes: a first conductive impurity layer containing first impurities in an impurity concentration; an electron acceleration layer containing the first impurities in a lower impurity concentration than the first conductive impurity layer; and a second conductive impurity layer to which a voltage is applied, the second conductive impurity layer containing second impurities and disposed on a side opposite a light incidence side of the electron acceleration layer, and an insulating layer is disposed between the electron acceleration layer and the multiplication and accumulation layer.

REFERENCES:
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patent: 2006/0197007 (2006-09-01), Iwabuchi et al.
patent: 4-115575 (1992-04-01), None
patent: 6-243795 (1994-09-01), None
patent: 7-66379 (1995-03-01), None
patent: 7-176721 (1995-07-01), None

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