Imaging device having two anti-reflection layers on a surface of

Details Imaging device having two anti-reflection layers on a surface of Imaging device having two anti-reflection layers on a surface of

1985-08-27

1987-09-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

4271261, 148DIG172, H01L 2714, H01L 3118

Patent

active

046898735

ABSTRACT:
An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

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"Multilayer Anti-reflection Coatings For Optical Components", by D. J. Pacey, pp. 270-283, Manufacturing Optics International, vol. 22, No. 5 (Nov. 1969).
"The Monitoring Of Thin Films For Optical Purposes", by H. A. Macleod, pp. 383-390, Vacuum, vol. 27/No. 4.

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